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| SB020 thru SB060 Vishay Semiconductors formerly General Semiconductor Miniature Schottky Barrier Rectifiers Case Style MPG06 0.100 (2.54) 0.090 (2.29) DIA 1.0 (25.4) MIN. d nde nge Exte e Ra ltag Features Vo Reverse Voltage 20 to 60V Forward Current 0.6A * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss, high efficiency * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications * Guardring for overvoltage protection 0.125 (3.18) 0.115 (2.92) Mechanical Data Case: Molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds 0.375" (9.5mm) lead length, 5lbs. (2.3kg) tension Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0064oz., 0.181g 1.0 (25.4) MIN. 0.025 (0.635) 0.023 (0.584) DIA. Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at 0.375" (9.5mm) lead length (See Fig. 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance(2) Operating junction temperature range Storage temperature range Symbol SB020 VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ TSTG (TA = 25C unless otherwise noted) SB030 30 21 30 SB040 40 28 40 0.6 20 80 20 SB050 50 35 50 SB060 60 42 60 Unit V V V A A C/W 20 14 20 -65 to +125 -65 to +150 -65 to +150 C C Electrical Characteristics Maximum instantaneous forward voltage at 0.6A(1) Maximum instantaneous reverse current at rated DC blocking voltage(1) VF TA = 25C TA = 100C IR 0.55 0.5 10 0.70 V mA 5.0 Notes: (1) Pulse test: 300s pulse width, 1% duty cycle (2) Thermal resistance junction to lead P.C.B. mounted 0.375" (9.5mm) lead length Document Number 88714 11-Feb-02 www.vishay.com 1 SB020 thru SB060 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve 0.8 25 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) Resistive or Inductive Load 0.375" (9.5mm) Lead Length 0.6 SB050 - SB060 0.4 20 15 10 SB020 - SB040 0.2 5 0 0 20 40 60 80 100 120 140 0 160 1 10 100 Lead Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Leakage Current (A) 10 10 Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Forward Current (A) TJ = 125C 1 1 TJ = 125C TJ = 150C 0.1 TJ = 25C SB020 - SB040 SB050 & SB060 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 TJ = 100C SB020 thru SB040 SB050 thru SB060 TJ = 25C 0 20 40 60 80 100 0.01 0.001 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 1000 100 Fig. 6 - Transient Thermal Impedance Transient Thermal Impedance (C/W) Junction Capacitance (pF) TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 10 100 1 10 0.1 1 10 100 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) www.vishay.com 2 t, Pulse Duration (sec.) Document Number 88714 11-Feb-02 |
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